Periodic lateral structure of Al content modulations in AlGaAs grown on vicinal (111)A GaAs by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Problems related to the formation of lateral p–n junctions on channeled substrate (100) GaAs for lasers
2. Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructures
3. Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate
4. Stimulated emission in semiconductor quantum wire heterostructures
5. Lateral p-n junctions on GaAs(111)A substrates patterned with equilateral triangles
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Substrate misorientation effects on Zn1−xMgxSe layers grown on GaAs(111) by molecular beam epitaxy;Journal of Crystal Growth;1999-06
2. Self-organization of quantum wire-like morphology on InxGa1 − xAs single quantum wells grown on (100)InP vicinal surfaces depending on the substrate misorientation, buffer mismatch and growth temperature;Microelectronics Journal;1997-10
3. In situ observation of macrostep formation on misoriented GaAs(111)B by molecular beam epitaxy;Journal of Crystal Growth;1996-09
4. Facet generation during molecular beam epitaxy of GaAs/AlGaAs multilayers on GaAs (001) patterned substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07
5. AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates;Microelectronics Journal;1996-07
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