Self-organization of quantum wire-like morphology on InxGa1 − xAs single quantum wells grown on (100)InP vicinal surfaces depending on the substrate misorientation, buffer mismatch and growth temperature-Reference-Cited by-同舟云学术

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Self-organization of quantum wire-like morphology on InxGa1 − xAs single quantum wells grown on (100)InP vicinal surfaces depending on the substrate misorientation, buffer mismatch and growth temperature

Published:1997-10 Issue:8-10 Volume:28 Page:865-873
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Peiró F.,Cornet A.,Morante J.R.,Flalkias G.,Georgakilas A.

Publisher

Elsevier BV

Subject

General Engineering

Reference17 articles.

1. Stimulated emission in semiconductor quantum wire heterostructures

2. Applications of MBE-grown heterostructures and quantum wells in fundamental research and in advanced semiconductor devices

3. Single electron transport and current quantization in a novel quantum dot structure

4. A comparison of optoelectronic properties of lattice-matched and strained quantum-well and quantum-wire structures

5. InAs-GaAs quantum dots: From growth to lasers

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