Formation and photoluminescence of quantum wire structures on vicinal (110) GaAs substrates by MBE-Reference-Cited by-同舟云学术

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Formation and photoluminescence of quantum wire structures on vicinal (110) GaAs substrates by MBE

Published:1993-02 Issue:1-4 Volume:127 Page:1041-1044
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Inoue Koichi,Kimura Kenta,Maehashi Kenzo,Hasegawa Shigehiko,Nakashima Hisao,Iwane Masaaki,Matsuda Osamu,Murase Kazuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. MBE growth of AlGaAs/GaAs superlattices on GaAs (110) substrates

2. Advanced Processing and Characterization Technologies;Nakashima,1991

3. Step structures during MBE growth of GaAs and AlGaAs films on vicinal GaAs(110) surfaces inclined toward (111)B

4. Nitrogen trap in the semiconductor alloys GaAs1−χxPχx and AlχxGa1−χxAs

5. K. Inoue, K. Kimura, M. Iwane and H. Nakashima, unpublished.

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1. Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap;Applied Physics Letters;2014-08-18

2. Epitaxial Semiconductor Quantum Wires;Journal of Nanoscience and Nanotechnology;2008-07-01

3. Analysis of subband structures and optical properties of periodic strained quantum wires by a finite element method;Journal of Applied Physics;2002-05

4. HIGH DENSITY EXCITATION EFFECTS ON EXCITONS AND ELECTRON-HOLE PAIRS IN AlxGa1-xAs/AlAs QUANTUM WIRES;International Journal of Modern Physics B;2001-12-10

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