Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap-Reference-Cited by-同舟云学术

Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap

Published:2014-08-18 Issue:7 Volume:105 Page:071912
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yerino Christopher D.¹,Simmonds Paul J.²,Liang Baolai²,Dorogan Vitaliy G.³,Ware Morgan E.³,Mazur Yuriy I.³,Jung Daehwan¹,Huffaker Diana L.²⁴,Salamo Gregory J.³,Lee Minjoo Larry¹

Affiliation:

1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA

2. California NanoSystems Institute, University of California, Los Angeles, California 90095, USA

3. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

4. Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4893747

Reference27 articles.

1. Submilliamp threshold current (0.62 mA at 0°C) and high output power (220 mW) 1.5 μm tensile strained InGaAs single quantum well lasers

2. Theoretical analysis of pure effects of strain and quantum confinement on differential gain in InGaAsP/lnP strained-layer quantum-well lasers

3. Improved performance due to suppression of spontaneous emission in tensile-strain semiconductor lasers

4. An electrically pumped germanium laser

5. Quantum dots: promises and accomplishments

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