Growth Control of GaAs Epilayers with Specular Surface on Nonmisoriented (111)B Substrates by MBE

Abstract

GaAs epilayers with specular surface are successfully obtained on nonmisoriented GaAs(111)B substrates by conventional MBE. The growth control achieved via in situ, real time monitoring of the specular beam intensity of reflection high-energy electron diffraction (RHEED) on static and dynamic GaAs(111)B surfaces is reported. The dependence of GaAs(111)B surface reconstruction phases on growth parameters is discussed. The proper starting surface phase (√19×√19) is identified by RHEED for the growth of mirror-smooth epilayers. Growth conditions are optimized in terms of the static surface phase diagram and the temporal RHEED intensity.