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Carbon doping into GaAs using combined ion beam and molecular beam epitaxy method

  • Published:1995-05 Issue: Volume:150 Page:236-240
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Iida Tsutomu,Makita Yunosuke,Kimura Shinji,Kawasumi Yoko,Yamada Akimasa,Uekusa Shin-ichiro,Tsukamoto Takeyo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Subband structure ofp-typeδ-doped GaAs as dependent on the acceptor concentration and the layer thickness;The European Physical Journal Applied Physics;2008-03

2. Hole energy levels in p-type δ-doped Si quantum wells;Solid-State Electronics;2000-01

3. Thomas-Fermi approximation inp-type δ-doped quantum wells of GaAs and Si;Physical Review B;1998-03-15

4. Optical characterization of low-energy nitrogen-ion doped GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-05

5. Low energy nitrogen ion doping into GaAs using combined ion-beam and molecular-beam epitaxy method;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
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