Thomas-Fermi approximation inp-type δ-doped quantum wells of GaAs and Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.6286/fulltext
Reference21 articles.
1. Ultrathin doping layers as a model for 2D systems
2. The delta-doped field-effect transistor (δFET)
3. Growth and characterization of a delta‐function doping layer in Si
4. Electronic structure ofn-type δ-doping multiple layers and superlattices in silicon
5. Diffusion of Si-acceptor in δ-doped GaAs grown on GaAs(111)A by molecular beam epitaxy
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