The formation of indirect excitons in atomic layer doped systems
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference11 articles.
1. A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET)
2. Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si
3. Atomic layer doped field‐effect transistor fabricated using Si molecular beam epitaxy
4. Study of the electronic properties of GaAs-based atomic layer doped field effect transistor (ALD-FET) under the influence of hydrostatic pressure
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2. Heavy and light exciton states in c-AlGaN/GaN asymmetric double quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2020-10
3. Exciton binding energy in coupled double zinc blende GaN/InGaN quantum well;physica status solidi (b);2016-11-08
4. Papers submitted to the 16th International Conference on the Physics of Light-Matter Coupling in Nanostructures, PLMCN 2015 (Medellín, Colombia);Superlattices and Microstructures;2015-11
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