Study of the electronic properties of GaAs-based atomic layer doped field effect transistor (ALD-FET) under the influence of hydrostatic pressure-Reference-Cited by-同舟云学术

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Study of the electronic properties of GaAs-based atomic layer doped field effect transistor (ALD-FET) under the influence of hydrostatic pressure

Published:2009-03 Issue:3 Volume:246 Page:581-585
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Martínez-Orozco J. C.,Rodríguez-Vargas I.,Duque C. A.,Mora-Ramos M. E.,Gaggero-Sager L. M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs

2. The δ-Doped Field-Effect Transistor

3. A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET)

4. Atomic layer doped field‐effect transistor fabricated using Si molecular beam epitaxy

5. Influence of the hydrostatic pressure onto the electronic and transport properties of n-type double -doped GaAs quantum wells

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1. Hydrostatic pressure and temperature effects on nonlinear optical properties in harmonic-Gaussian asymmetric double quantum wells;Physica Scripta;2024-03-18

2. The effect of structure parameters and static electric field on the nonlinear optical properties of triple InGaAs/GaAs quantum well;Journal of Molecular Structure;2023-02

3. Pressure, temperature and electric field effects on the photoionization cross section in a multilayered spherical quantum dot;The European Physical Journal Plus;2022-11-15

4. Theoretical simulation of optical absorption coefficients in heterostructure based on semi-parabolic-double quantum wells;The European Physical Journal Plus;2022-05

5. Evaluation of second harmonic generation susceptibility in a delta-doped AlGaAs/GaAs asymmetric Gaussian potential;Micro and Nanostructures;2022-03

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