Influence of the hydrostatic pressure onto the electronic and transport properties of n-type double -doped GaAs quantum wells
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference19 articles.
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2. Theoretical study of electronic and optical properties in doped quantum structures with Razavy confining potential: effects of external fields;Journal of Computational Electronics;2022-03-07
3. Simultaneous effect of impurities, hydrostatic pressure, and applied potential on the optical absorptions in a GaAs field-effect transistor;Results in Physics;2019-12
4. GaAs quantum well in the non-parabolic case: the effect of hydrostatic pressure on the intersubband absorption coefficient and the refractive index;The European Physical Journal Applied Physics;2019-05
5. Controlling the optical absorption properties of δ-FETs by means of contact voltage and hydrostatic pressure effects;Superlattices and Microstructures;2019-03
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