Atomic layer doped field‐effect transistor fabricated using Si molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101263
Reference9 articles.
1. Growth and characterization of atomic layer doping structures in Si
2. The δ-Doped Field-Effect Transistor
3. The delta-doped field-effect transistor (δFET)
4. A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET)
5. Si–MBE: Growth and Sb doping
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