Binding energy of a donor impurity in GaAs systems under electric and magnetic fields, and hydrostatic pressure
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. Ultrathin doping layers as a model for 2D systems
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3. Donor impurity atom effect on the inter-subband absorption coefficient for symmetric double n-type δ-doped GaAs quantum well;Superlattices and Microstructures;2021-08
4. The effect of impurity position and doping concentration on the binding energies and total optical absorption coefficients in a $${\delta }$$-doped quantum well;The European Physical Journal Plus;2021-04
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