Simultaneous effect of impurities, hydrostatic pressure, and applied potential on the optical absorptions in a GaAs field-effect transistor
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference48 articles.
1. Intersubband transitions in In x Al (1 − x ) N/In y Ga (1 − y ) N quantum well operating at 1.55 μm
2. Refractive index changes in AlGaN/GaN heterostructure field-effect transistors
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4. Electron transport in Al Ga1−As δ-MIGFETs: Conductivity enhancement induced by magnetic field effects
5. Effect of Si δ -doped layer position on optical absorption in GaAs quantum well under hydrostatic pressure
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