Refractive index changes in AlGaN/GaN heterostructure field-effect transistors
Author:
Publisher
Elsevier BV
Subject
Biomaterials,Bioengineering,Mechanics of Materials
Reference34 articles.
1. Electric field control of optical second‐harmonic generation in a quantum well
2. Observation of nonlinear optical rectification at 10.6 μm in compositionally asymmetrical AlGaAs multiquantum wells
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2. Theoretical analysis of intersubband optical absorption in asymmetric AlInN/GaN/AlInN quantum well heterostructures;Optik;2021-12
3. Optical properties of spherical quantum dot in the presence of donor impurity under the magnetic field;Physica B: Condensed Matter;2021-07
4. Simultaneous effect of impurities, hydrostatic pressure, and applied potential on the optical absorptions in a GaAs field-effect transistor;Results in Physics;2019-12
5. Intersubband resonant enhancement of second order-nonlinear susceptibility in asymmetric AlxGa1−xN/GaN double quantum wells;Journal of Applied Physics;2019-10-07
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