Donor impurity atom effect on the inter-subband absorption coefficient for symmetric double n-type δ-doped GaAs quantum well-Reference-Cited by-同舟云学术

Donor impurity atom effect on the inter-subband absorption coefficient for symmetric double n-type δ-doped GaAs quantum well

Published:2021-08 Issue: Volume:156 Page:106988
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Rodríguez-Magdaleno K.A.^ORCID,Turkoglu A.,Ungan F.,Mora-Ramos M.E.^ORCID,Martínez-Orozco J.C.^ORCID

Funder

Secretaría de Educación Pública

Consejo Nacional de Ciencia y Tecnología

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference39 articles.

1. Silicon and germanium doping of epitaxial Gallium Arsenide grown by the trimethylgallium-arsine method;Bass;J. Cryst. Growth,1979

2. Complex free-carrier profile synthesis by ”atomic-plane” doping of MBE GaAs;Wood;J. Appl. Phys.,1980

3. Molecular Beam Epitaxy of artificially layered III-V semiconductors: ultrathin-layer (GaAs)m (AlAs)m superlattices and delta (δ-) doping in GaAs;Ploog;Phys. Scripta,1987

4. Thomas-Fermi theory of δ-doped semiconductor structures: exact analytical results in the high-density limit;Ioriatti;Phys. Rev. B,1990

5. Electron energy levels in a δ-doped layer in gaas;Degani;Phys. Rev. B,1991

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Disorder effect on intersubband optical absorption of n-type δ-doped quantum well in GaAs;Journal of Physics: Condensed Matter;2023-07-06

2. Linear and nonlinear optical absorption coefficients and refractive index changes of GaAs/GaAsSb/GaAs V-shaped quantum wells affected by intense laser fields;Optical and Quantum Electronics;2023-04-08

3. Self-Consistent Study of GaAs/AlGaAs Quantum Wells with Modulated Doping;Nanomaterials;2023-03-01

4. Nonlinear electron mobility due to asymmetric doping in V-shaped double quantum well FET structure;Indian Journal of Physics;2022-05-23