Linear and nonlinear optical absorption coefficients and refractive index changes of GaAs/GaAsSb/GaAs V-shaped quantum wells affected by intense laser fields
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s11082-023-04799-5.pdf
Reference43 articles.
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2. Boykin, T.B., Klimeck, G., von Allmen, P., Lee, S., Oyafuso, F.: Valley splitting in V-shaped quantum wells. J. Appl. Phys. 97, 113702 (2005). https://doi.org/10.1063/1.1913798
3. Chaleshtari, Z.N., Haghighatzadeh, A., Attarzadeh, A.: Investigating the effect of position-dependent effective mass on the valence-band electronic states of GaAs/GaAsSb/GaAs parabolic quantum wells modulated by intense laser fields. Solid State Commun. 353, 114870 (2022). https://doi.org/10.1016/j.ssc.2022.114870
4. Das, S., Sharma, A.S., Bakshi, S., Dhar, S.: Photoluminescence investigation of the properties of GaAsSb in the dilute Sb regime. J. Mater. Sci. Mater. Electron. 31, 6255–6262 (2020)
5. Ebrahimzadeh, M., Haghighatzadeh, A., Dutta, J.: Improved third-order optical nonlinearities in Ag/MoS2 Schottky-type nano/hetero-junctions. Opt. Laser Technol. 140, 107092 (2021). https://doi.org/10.1016/j.optlastec.2021.107092
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