Optical characterization of low-energy nitrogen-ion doped GaAs-Reference-Cited by-同舟云学术

Optical characterization of low-energy nitrogen-ion doped GaAs

Published:1997-05 Issue: Volume:127-128 Page:437-441
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Shima Takayuki,Makita Yunosuke,Kimura Shinji,Iida Tsutomu,Sanpei Hirokazu,Yamaguchi Misao,Kudo Kazuhiro,Tanaka Kuniaki,Kobayashi Naoto,Sandhu Adarsh,Hoshino Yasushi

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Toward a Theory of Isoelectronic Impurities in Semiconductors

2. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide

3. Photoluminescence of nitrogen-doped VPE GaAs

4. Sharp photoluminescence lines from nitrogen atomic‐layer‐doped GaAs

5. Nitrogen pair luminescence in GaAs

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