Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy

Published:2007-01 Issue: Volume:298 Page:73-75
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Endo Y.,Tanioka K.,Hijikata Y.,Yaguchi H.,Yoshida S.,Yoshita M.,Akiyama H.,Ono W.,Nakajima F.,Katayama R.,Onabe K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide

2. Photoluminescence of nitrogen-doped VPE GaAs

3. Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE

4. Optical characterization of low-energy nitrogen-ion doped GaAs

5. Discrete and continuous spectrum of nitrogen-induced bound states in heavily dopedGaAs1−xNx

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation;Nano Express;2020-08-04

2. Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy;Japanese Journal of Applied Physics;2015-04-07

3. Enhanced optical absorption due toE+-related band transition in GaAs:N δ-doped superlattices;Applied Physics Express;2014-09-26

4. Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys;physica status solidi (a);2014-03-19

5. Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs;AIP Conference Proceedings;2013

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