Subband structure ofp-typeδ-doped GaAs as dependent on the acceptor concentration and the layer thickness
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap:2008018/pdf
Reference29 articles.
1. Delta doping of III–V compound semiconductors: Fundamentals and device applications
2. Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures
3. Thomas-Fermi theory of δ-doped semiconductor structures: Exact analytical results in the high-density limit
4. Radiative transitions associated with hole confinement at Si δ-doped planes in GaAs
5. Electronic structure of Si delta -doped GaAs in an electric field
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1. Nonlinear intersubband absorption and refractive index change in n-type δ-doped GaAs for different donor distributions;The European Physical Journal Plus;2015-01
2. Linear and nonlinear intersubband optical absorption coefficient and refractive index change in n-type δ-doped GaAs structure;Optics Communications;2013-05
3. The hydrostatic pressure effects on intersubband optical absorption of n -type δ-doped quantum well in GaAs;Solid State Sciences;2012-04
4. TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET;Progress In Electromagnetics Research;2011
5. The nonlocal dielectric function in the random phase approximation for n-type delta-doped quantum wells in GaAs;Journal of Applied Physics;2010-10-15
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