Liquid phase electroepitaxial growth of thick and compositionally uniform AlGaAs layers on GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Liquid phase electroepitaxy of semiconductor compounds
2. Elementary Crystal Growth;Zytkiewicz,1994
3. Properties of very uniform InxGa1−xAs single crystals grown by liquid‐phase electroepitaxy
4. Growth of AlxGa1−xSb and GaSb bulk crystals with liquid phase electro-epitaxy (LPEE)
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1. Control of growth uniformity of III–V bulk crystals grown by contactless liquid phase electroepitaxy;Journal of Crystal Growth;2012-09
2. Unlimited Growth of III–V Bulk Crystals by Liquid-Phase Electroepitaxy;Crystal Growth & Design;2011-09-06
3. Time dependent simulations of the growth of III–V crystals by the liquid phase electroepitaxy;Journal of Crystal Growth;2011-03
4. Liquid phase electroepitaxy of semiconductors under static magnetic field;CrystEngComm;2011
5. Numerical analysis of growth kinetics of bulk III-V crystals grown by liquid phase electroepitaxy;Crystal Research and Technology;2010-09-17
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