Liquid phase electroepitaxy of semiconductor compounds-Reference-Cited by-同舟云学术

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Liquid phase electroepitaxy of semiconductor compounds

Published:1986-01 Issue:1-4 Volume:12 Page:29-43
ISSN:0146-3535
Container-title:Progress in Crystal Growth and Characterization
language:en
Short-container-title:Progress in Crystal Growth and Characterization

Author:

Bryskiewicz T.

Publisher

Elsevier BV

Subject

General Engineering

Reference91 articles.

1. Current-Controlled Growth and Dopant Modulation in Liquid Phase Epitaxy

2. Inst. Phys. Conf. Ser. No. 24, Ch. 3;Daniele,1975

3. Electric current controlled growth and doping modulation in GaAs liquid phase epitaxy

4. Inst. Phys. Conf. Ser. No. 33b, Ch. 2;Jastrzebski,1977

5. A New Approach to Liquid Phase Electroepitaxy (LPEE) of III–V Compounds

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1. Mesa orientation dependence of lateral growth of GaN microchannel epitaxy by electric liquid-phase epitaxy using a mesa-shaped substrate;Journal of Crystal Growth;2018-08

2. Lateral growth of GaN by liquid phase electroepitaxy using mesa-shaped substrate;Japanese Journal of Applied Physics;2016-09-16

3. Electrochemical Liquid–Liquid–Solid (ec-LLS) Crystal Growth: A Low-Temperature Strategy for Covalent Semiconductor Crystal Growth;Accounts of Chemical Research;2015-07-01

4. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015

5. Selective growth of GaN by liquid phase electroepitaxy using aluminum oxide mask;Japanese Journal of Applied Physics;2014-10-10

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