Electric current controlled growth and doping modulation in GaAs liquid phase epitaxy-Reference-Cited by-同舟云学术

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Electric current controlled growth and doping modulation in GaAs liquid phase epitaxy

Published:1975-09 Issue:2 Volume:30 Page:267-275
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lawrence David J.,Eastman Lester F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. PREPARATION AND PROPERTIES OF HIGH‐PURITY EPITAXIAL GaAs GROWN FROM Ga SOLUTION

2. Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasers

3. Proc. 1968 Symp. on GaAs;Kang,1969

4. Liquid Phase Epitaxial Growth of InAs[sub 1−x] Sb[sub x]

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