PREPARATION AND PROPERTIES OF HIGH‐PURITY EPITAXIAL GaAs GROWN FROM Ga SOLUTION
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1755084
Reference10 articles.
1. Crystal Growth of GaAs from Ga by a Traveling Solvent Method
2. Photoluminescence and solution growth of gallium arsenide
3. Band Structure and Electron Transport of GaAs
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