Selective growth of GaN by liquid phase electroepitaxy using aluminum oxide mask-Reference-Cited by-同舟云学术

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Selective growth of GaN by liquid phase electroepitaxy using aluminum oxide mask

Published:2014-10-10 Issue:11S Volume:53 Page:11RC06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kambayashi Daisuke,Takakura Hiroyuki,Tomita Masafumi,Iwakawa Muneki,Mizuno Yosuke,Yamada Jumpei,Maruyama Takahiro,Naritsuka Shigeya

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=11S/a=11RC06/pdf

Reference18 articles.

1. Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

2. The Blue Laser Diode

3. Nitride semiconductors—impact on the future world

4. Characterisation of the electrical properties of solution-grown GaN crystals by reflectivity and Hall measurements

5. Low-pressure solution growth (LPSG) of GaN templates with diameters up to 3 inch

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mesa orientation dependence of lateral growth of GaN microchannel epitaxy by electric liquid-phase epitaxy using a mesa-shaped substrate;Journal of Crystal Growth;2018-08

2. Lateral growth of GaN by liquid phase electroepitaxy using mesa-shaped substrate;Japanese Journal of Applied Physics;2016-09-16

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