Growth of AlxGa1−xSb and GaSb bulk crystals with liquid phase electro-epitaxy (LPEE)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. On the effect of the barrier widths in the InAs/AlSb/GaSb single‐barrier interband tunneling structures
2. Liquid‐phase electroepitaxy: Growth kinetics
3. Growth of AlxGa1−xSb bulk material from metallic solution
4. Electroepitaxy of multicomponent systems: ternary and quarternary compounds
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2. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015
3. Electrical conductivity variation of (Bi2Te3)0.25(Sb2Te3)0.75 crystal grown using the zone melting method;International Journal of Materials Research;2013-03-14
4. Control of growth uniformity of III–V bulk crystals grown by contactless liquid phase electroepitaxy;Journal of Crystal Growth;2012-09
5. Unlimited Growth of III–V Bulk Crystals by Liquid-Phase Electroepitaxy;Crystal Growth & Design;2011-09-06
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