Growth of AlxGa1−xSb bulk material from metallic solution
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Negative differential resistance in AlGaSb/InAs single‐barrier heterostructures at room temperature
2. Ga<inf>1-x</inf>Al<inf>x</inf>Sb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficients
3. Characterization and growth of Al0.065Ga0.935Sb by liquid phase epitaxy
4. n‐type (Pb)Te doping of GaAs and AlxGa1−xSb grown by molecular‐beam epitaxy
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1. AlxGa1–xSb Crystals Grown by a Modified Stepanov Technique with an Ultrasonic Effect;Crystal Growth & Design;2019-04-04
2. References;Single Crystal Growth of Semiconductors from Metallic Solutions;2007
3. Forced convection induced thermal fluctuations at the solid–liquid interface and its effect on the radial alloy distribution in vertical Bridgman grown Ga1−xInxSb bulk crystals;Journal of Crystal Growth;2006-04
4. Numerical Simulation of the Growth of Ga X In1−X Sb by the Travelling Heater Method;The Kluwer International Series in Engineering and Computer Science;2002
5. Study of Al segregation phenomenon during Czochralski growth of AlxGa1−xSb;Journal of Crystal Growth;2001-12
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