n‐type (Pb)Te doping of GaAs and AlxGa1−xSb grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344004
Reference13 articles.
1. Preparation of 1.78‐μm wavelength Al0.2Ga0.8Sb/GaSb double‐heterostructure lasers by molecular beam epitaxy
2. Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy
3. Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
4. S-Doping of MBE-GaSb with H2S Gas
5. Molecular Beam Epitaxy of GaSb and GaSbxAs1-x
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