Properties of very uniform InxGa1−xAs single crystals grown by liquid‐phase electroepitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346411
Reference17 articles.
1. Preparation and properties of InAs1-xPx Alloys
2. Growth of homogeneous bulk In1-xGaxP
3. Preparation and properties of bulk Gax In1-x As Crystals
4. The preparation of Ga-rich GaxIn1−xSb alloy crystals
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3. References;Single Crystal Growth of Semiconductors from Metallic Solutions;2007
4. A mathematical model for solution growth of bulk crystals under magnetic field;Philosophical Magazine;2005-11-21
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