Growth of homogeneous bulk In1-xGaxP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Materials for light emitting diodes
2. Crystal synthesis, electrical properties, and spontaneous and stimulated photoluminescence of In1−xGaxP:N grown from solution
3. The preparation and properties of vapor-grown In1−xGax P
4. Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence
5. Growth of In[sub (1−x)]Ga[sub x]P p-n Junctions by Liquid Phase Epitaxy
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1. Low-Temperature Growth of Ternary III-V Semiconductor Crystals from Antimonide-Based Quaternary Melts;Crystal Growth Technology;2010-07-19
2. Low temperature growth of Ga1−xInxP bulk crystals from InSb-rich melt;Journal of Crystal Growth;2010-04
3. Ternary and quaternary alloy III–V antimonide (InAsSb and InAsSbP) virtual substrates made by liquid-phase epitaxy;IEE Proceedings - Optoelectronics;2003
4. Solution growth of thick III–V antimonide alloy epilayers (InAsSb, InGaSb, InGaAsSb, AlGaAsSb, and InAsSbP) for “virtual substrates”;Journal of Crystal Growth;2001-05
5. Growth of alloy substrates by liquid phase electroepitaxy; Theoretical considerations;Journal of Crystal Growth;1993-04
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