Solution growth of thick III–V antimonide alloy epilayers (InAsSb, InGaSb, InGaAsSb, AlGaAsSb, and InAsSbP) for “virtual substrates”
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Growth of homogeneous bulk In1-xGaxP
2. Control of GaInSb alloy composition grown from ternary solution
3. Pulling Technique of a Homogeneous GaInSb Alloy under Solute-Feeding Conditions
4. THM growth of AlxGa1−xSb bulk crystals
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