Time dependent simulations of the growth of III–V crystals by the liquid phase electroepitaxy-Reference-Cited by-同舟云学术

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Time dependent simulations of the growth of III–V crystals by the liquid phase electroepitaxy

Published:2011-03 Issue:1 Volume:318 Page:351-355
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zytkiewicz Zbigniew R.,Strak Pawel,Krukowski Stanislaw

Funder

the Polish Ministry of Science and Higher Education

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Liquid phase electroepitaxy of semiconductor compounds

2. Single Crystal Growth of Semiconductors from Metallic Solutions;Dost,2007

3. Growth of AlxGa1−xSb and GaSb bulk crystals with liquid phase electro-epitaxy (LPEE)

4. Growth of bulk single crystals under applied magnetic field by liquid phase electroepitaxy

5. Liquid phase electroepitaxial growth of thick and compositionally uniform AlGaAs layers on GaAs substrates

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial Crystal Growth: Methods and Materials;Springer Handbook of Electronic and Photonic Materials;2017

2. Control of growth uniformity of III–V bulk crystals grown by contactless liquid phase electroepitaxy;Journal of Crystal Growth;2012-09

3. Unlimited Growth of III–V Bulk Crystals by Liquid-Phase Electroepitaxy;Crystal Growth & Design;2011-09-06

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