First results on silicon carbide vapour phase epitaxy growth in a new type of vertical low pressure chemical vapour deposition reactor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. 6H-silicon carbide devices and applications
2. CVD growth and characterization of single-crystalline 6H silicon carbide
3. Growth mechanism of 6H‐SiC in step‐controlled epitaxy
4. Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers
5. Growth rate and surface microstructure in α(6H)–SiC thin films grown by chemical vapor deposition
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