Doping of GaAs in metalorganic MBE using gaseous sources
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source
2. GaAs growth in metal–organic MBE
3. MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
4. A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs
5. Chemical beam epitaxy of InGaAs
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