Full gaseous source growth of separate confinement MQW 1.55 μm laser structures in a production MOMBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
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Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Uniform growth of high-quality 2-in diameter In0.53Ga0.47As/In0.52Al0.48As/InP and In0.2Ga0.8As/GaAs/AlGaAs multi-quantum well wafers by MBE with GaP and GaAs decomposition sources;Journal of Crystal Growth;2002-04
2. Optimization of p-dopant profiles for GaInAsP MQW laser structures in MOMBE;Journal of Crystal Growth;1998-12
3. Dopant incorporation behaviour during MOMBE growth of InP on (1 0 0), {1 1 1} and nonplanar surfaces;Journal of Crystal Growth;1998-06
4. GRINSCH GaInAsP MQW laser structures grown by MOMBE;Journal of Crystal Growth;1998-06
5. Element incorporation in GaInAsP for uniform large area MOMBE;Journal of Crystal Growth;1998-06
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