Uniform growth of high-quality 2-in diameter In0.53Ga0.47As/In0.52Al0.48As/InP and In0.2Ga0.8As/GaAs/AlGaAs multi-quantum well wafers by MBE with GaP and GaAs decomposition sources-Reference-Cited by-同舟云学术

Uniform growth of high-quality 2-in diameter In0.53Ga0.47As/In0.52Al0.48As/InP and In0.2Ga0.8As/GaAs/AlGaAs multi-quantum well wafers by MBE with GaP and GaAs decomposition sources

Published:2002-04 Issue: Volume:237-239 Page:1504-1509
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Song Jin Dong,Kim Jong Min,Lee Yong Tak

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Investigations of the spectral characteristics of 980-nm InGaAs-GaAs-AlGaAs lasers

2. Mode analysis of semiconductor lasers using lateral confinement by native-oxide layers

3. Photoluminescence characterization of MBE grown AlGaAs/InGaAs/GaAs pseudomorphic HEMTs

4. Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

5. Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures: growth kinetics, electrical and optical properties

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to surface emitting laser diodes;Solid State Communications;2010-10

2. MBE growth and optical properties of digital-alloy 1.55μm multi-quantum wells;Journal of Crystal Growth;2004-10

3. Effects of rapid thermal annealing on the optical properties of 1.3 μm InGaAlAs multiquantum wells grown by digital-alloy molecular-beam epitaxy;Applied Physics Letters;2002-06-17