Confinement of δ Be at the one monolayer level in GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs
2. Effect of substrate temperature on migration of Si in planar‐doped GaAs
3. Silicon segregation in delta‐doped GaAs characterized by Auger electron spectroscopy
4. Migration of Si in δ-doped GaAs
5. Atomic diffusion and surface segregation of Si in δ-doped GaAs grown by gas source molecular beam epitaxy
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Controlled anisotropic ordering of Be deposited on the GaAs(001) surface;Surface Science;1998-03
2. In segregation at the growth front of the GaAs/In0.30Ga0.70As (100) heterojunction;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03
3. Confinement of high Be doping levels in AlInAs/GaInAsnpnheterojunction bipolar transistors by low temperature molecular‐beam epitaxial growth;Applied Physics Letters;1993-09-06
4. Dimerization induced Be segregation in GaAs;Applied Physics Letters;1993-03-15
5. Peak-to-valley ratio of 130:1 at 1 K in AlGaAs/GaAs/AlGaAs tunneling structures: evidence for suppressed dopant segregation;Journal of Crystal Growth;1993-02
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