Silicon segregation in delta‐doped GaAs characterized by Auger electron spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101173
Reference10 articles.
1. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs
2. Delta- (°-) doping in MBE-grown GaAs: Concept and device application
3. Effects of substrate temperatures on the doping profiles of Si in selectively doped AlGaAs/GaAs/AlGaAs double‐heterojunction structures
4. Spatial localization of impurities in δ‐doped GaAs
5. Subband physics for a “realistic” δ-doping layer
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