Confinement of high Be doping levels in AlInAs/GaInAsnpnheterojunction bipolar transistors by low temperature molecular‐beam epitaxial growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109677
Reference23 articles.
1. The design, fabrication, and characterization of a novel electrode structure self-aligned HBT with a cutoff frequency of 45 GHz
2. Performance potential of high-frequency heterojunction transistors
3. AlInAs/GaInAs HBT IC technology
4. Ultrahigh Be doping of Ga0.47In0.53As by low‐temperature molecular beam epitaxy
5. Ultra-high doping levels of GaAs with beryllium by molecular beam epitaxy
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High current density tunnel diodes for multi-junction photovoltaic devices on InP substrates;Applied Physics Letters;2021-02-08
2. Molecular beam epitaxy of III–V ferromagnetic semiconductors;Molecular Beam Epitaxy;2013
3. Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures;Journal of Crystal Growth;2003-05
4. Effect of emitter design on the dc characteristics of InP-based double-heterojunction bipolar transistors;Semiconductor Science and Technology;2001-02-15
5. Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy;Materials Science and Engineering: B;2000-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3