AlInAs/GaInAs HBT IC technology-Reference-Cited by-同舟云学术

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AlInAs/GaInAs HBT IC technology

Published:1991-03 Issue:3 Volume:26 Page:415-421
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Jensen J.F.,Stanchina W.E.,Metzger R.A.,Rensch D.B.,Lohr R.F.,Quen R.W.,Pierce M.W.,Allen Y.K.,Lou P.F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx1/4/2493/00075028.pdf?arnumber=75028

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface passivation of InP/InGaAs heterojunction bipolar transistors;Semiconductor Science and Technology;2004-04-09

2. SEE analysis of digital InP-based HBT circuits at gigahertz frequencies;IEEE Transactions on Nuclear Science;2001-12

3. Heterojunction Transistors at Low Temperature;Device and Circuit Cryogenic Operation for Low Temperature Electronics;2001

4. Absolute potential measurements inside microwave digital IC's using a micromachined photoconductive sampling probe;IEEE Transactions on Microwave Theory and Techniques;1998-12

5. InP-HBT ICs FOR 40 Gb/s OPTICAL LINKS;International Journal of High Speed Electronics and Systems;1998-06

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