Ultrahigh Be doping of Ga0.47In0.53As by low‐temperature molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101057
Reference9 articles.
1. Beryllium doping in Ga0.47In0.53As and Al0.48In0.52As grown by molecular‐beam epitaxy
2. Influence of oxygen incorporation on beryllium‐doped InGaAs grown by molecular beam epitaxy
3. GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxy
4. Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P
5. Gas source molecular beam epitaxy of GaInAs(P): Gas sources, single quantum wells, superlattice p-i-n's and bipolar transistors
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1. Increasing the Equilibrium Solubility of Dopants in Semiconductor Multilayers and Alloys;Physical Review Letters;2008-03-11
2. High-performance, metamorphic InxGa1-xAs tunnel diodes grown by molecular beam epitaxy;IEEE Electron Device Letters;2003-10
3. Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates;Japanese Journal of Applied Physics;2003-04-15
4. Electrical properties of silicon- and beryllium-doped GaInP and (AlGa)InP grown by solid source molecular beam epitaxy;Journal of Crystal Growth;2002-02
5. Growth of ultrahigh carbon-doped InGaAs and its application to InP/InGaAs(C) HBTs;IEEE Transactions on Electron Devices;2002
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