Influence of oxygen incorporation on beryllium‐doped InGaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98566
Reference6 articles.
1. LPE Growth Techniques for Fabricating Abrupt Zinc‐ and Magnesium‐Doped p+‐n InGaAsP / InP Heterojunctions
2. Magnesium‐ and calcium‐doping behavior in molecular‐beam epitaxial III‐V compounds
3. Effect of oxygen on In0.53Ga0.47As films grown by molecular beam epitaxy
4. Residual defect center in GaInAs/InP films grown by molecular beam epitaxy
5. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
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1. Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy;AIP Advances;2017-07
2. Nanoscale doping of compound semiconductors by solid phase dopant diffusion;Applied Physics Letters;2016-03-21
3. Improvement of surface leakage current of 2.6 µm InGaAs photodetectors by using inductive coupled plasma chemical vapor deposition technology;Japanese Journal of Applied Physics;2015-03-25
4. Oxygen impurities in Ga-0.In-51(0).P-49 grown by solid-source molecular beam epitaxy;Journal of Materials Science: Materials in Electronics;2002
5. Growth of high quality AlGaAs/GaAs heterostructures by molecular beam epitaxy for photonic and electronic device applications;Thin Solid Films;1993-08
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