Effect of oxygen on In0.53Ga0.47As films grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96112
Reference4 articles.
1. Epitaxie par jets moléculaires de In0,53Ga0,47As et de InP sur substrats de InP
2. Electrical and optical properties of Si‐ and Sn‐doped InxGa1−xAs (x≂0.53) grown by molecular beam epitaxy
3. Correlation between background carrier concentration and x‐ray linewidth for InGaAs/InP grown by vapor phase epitaxy
4. Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface
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4. Liquid phase epitaxy growth of InGaAs with rare-earth gettering: Characterization and deep level transient spectroscopy studies;Journal of Electronic Materials;1995-07
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