Deep‐level transient spectroscopy study in gettered liquid phase epitaxy grown In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359371
Reference9 articles.
1. Liquid phase epitaxy growth of high purity InP using rare earth dysprosium gettering
2. Very high purity InP layer grown by liquid‐phase epitaxy using erbium gettering
3. Growth and Characterization of In0.83Ga0.17As0.39P0.61Layers by Liquid-Phase Epitaxy Using Erbium Gettering
4. Photoluminescence of undoped and Er-doped 1.1-μm InGaAsP layers grown by liquid-phase epitaxy
5. Schottky and field‐effect transistor fabrication on InP and GaInAs
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2. Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers;Semiconductor Science and Technology;2013-02-25
3. LPE growth of InP layers from rare-earth treated melts for radiation detector structures;Materials Science and Engineering: B;2009-11
4. The behaviour of ternary compounds InGaAs and GaAsN subjected to electron irradiation;Vacuum;2007-03
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