Very high purity InP layer grown by liquid‐phase epitaxy using erbium gettering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353875
Reference16 articles.
1. Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy
2. Growth of high quality indium phosphide from metalorganic sources by molecular beam epitaxy
3. Very high purity InP epilayer grown by metalorganic chemical vapor deposition
4. High‐purity epitaxial indium phosphide grown by the hydride technique
5. Donor identification in liquid phase epitaxial indium phosphide
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3. Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers;Semiconductor Science and Technology;2013-02-25
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