Liquid phase epitaxy growth of InGaAs with rare-earth gettering: Characterization and deep level transient spectroscopy studies-Reference-Cited by-同舟云学术

Liquid phase epitaxy growth of InGaAs with rare-earth gettering: Characterization and deep level transient spectroscopy studies

Published:1995-07 Issue:7 Volume:24 Page:833-840
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Kumar A.,Pal D.,Bose D. N.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02653332.pdf

Reference23 articles.

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3. R.J. Walters, G.J. Shaw, G.P. Summers, M.W. Wan Lass and J.S. Ward,Proc. Fourth Intl. Conf. InP and Related Mater., (New York: IEEE New York 1992), p. 550.

4. GalnAsP Alloy Semiconductors, ed. T.P. Pearsall(New York: John Wiley & Sons, 1982).

5. H. Morkos and L.F. Eastman,J. Cryst. Growth 36,109 (1976).

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