1. See for example: InAsSbP/InAs LEDs for the 3.3–5.5μm spectral range, B. Matveev et al., IEE Proc. Optoelectronics, 145, Special Issue on Mid-IR devices & materials and papers therein — (see also vol 144 for additional related papers).
2. High Power 4.6 μm LEDs for CO detection grown by LPE using rare earth gettering. A. Krier, H. Gao, V. Sherstnev, Yu. Yakovlev. Electronics Letters, (USA), 35, 1665–7(1999)
3. A.N. Baranov, A.N. Imenkov, O.P. Kapranchik, V.V. Negreskul, A.G. Chernyavskii, V.V. Sherstnev Yu.P. Yakovlev. Long-wavelength light-emitting diodes, based on InAsSbP/InAs heterostructures (λ=3.0–4.8μm) at 300K with wide-gap window. Pisma v Zhurnal Tekh.Fiziki (USSR), 16(16), p.42–47, (1990).
4. S. McCabe and B.D. MacCraith, Electron.Lett.
29 1719–21(1993)
5. S.D. Smith, A. Vass, P Bramley, J.G. Crowder and C.H. Wang, IEE proc-Optoelectronics, 144, No 5, 266 (1997)