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Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs

  • Published:2000-06-01 Issue:3 Volume:147 Page:217-221
  • ISSN:1350-2433
  • Container-title:IEE Proceedings - Optoelectronics
  • language:en
  • Short-container-title:

Author:

Krier A.,Gao H.H.,Sherstnev V.V.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Atomic and Molecular Physics, and Optics

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4. Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy;Infrared Physics & Technology;2012-01

5. Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6–3.5μm;Infrared Physics & Technology;2012-01
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