GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100048
Reference16 articles.
1. Heterostructure bipolar transistors and integrated circuits
2. Diffused epitaxial GaAlAs‐GaAs heterojunction bipolar transistor for high‐frequency operation
3. AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process
4. High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistors
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1. Airy function analysis of Franz–Keldysh oscillations in the photoreflectance spectra of In1−xGaxAsyP1−y layers;Journal of Applied Physics;1997-09-15
2. Evaluation of base transit time in ultra-thin carbon-doped base InP/InGaAs heterojunction bipolar transistors;Electronics Letters;1996
3. Temperature dependent DC characteristics of an InP/InGaAs/InGaAsP HBT;IEEE Electron Device Letters;1994-05
4. Chemical beam epitaxy — a child of surface science;Surface Science;1994-01
5. Chemical beam epitaxy;Critical Reviews in Solid State and Materials Sciences;1992-01
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