AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process-Reference-Cited by-同舟云学术

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AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process

Published:1987-07 Issue:7 Volume:8 Page:303-305
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chang M.-C.F.,Asbeck P.M.,Wang K.C.,Sullivan G.J.,Neng-Haung Sheng ,Higgins J.A.,Miller D.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31991/01487189.pdf?arnumber=1487189

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