Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. InP/InGaAs double-heterojunction bipolar transistor with step-graded InGaAsP collector
2. InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions
3. Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications
4. Be diffusion in InGaAs/InP heterojunction bipolar transistors
5. Beryllium diffusion in GaInAs grown by molecular beam epitaxy
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1. Diffusion models of grown-in and implanted p-type dopant in III-V semiconductor compounds;The European Physical Journal Applied Physics;2023-12-19
2. Effect of high temperature rapid thermal annealing on optical properties of InGaAsP grown by molecular beam epitaxy;Optical Materials Express;2017-10-03
3. Grown-in beryllium diffusion in indium gallium arsenide: An ab initio, continuum theory and kinetic Monte Carlo study;Acta Materialia;2017-02
4. The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device;Journal of Crystal Growth;2017-01
5. A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations;Journal of Applied Physics;2014-09-14
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